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प्रश्न
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
पर्याय
Breakdown voltage
0.0 V
0.3V
0.7V
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उत्तर
Current through a reverse-biased p-n junction increases abruptly at: Breakdown voltage
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संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The diffusion current in a p-n junction is
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The depletion layer in the p-n junction diode is caused by ______.
p-n junction diode is formed
What is the depletion region?
What is a p-n junction diode?
What is drift?
Which charge carriers remain near the junction after the region loses mobile charge carriers?
In which direction is the electric field established by the fixed ions?
How does the interface between physically joined p-type and n-type slabs act on charge carriers?
In which circuits are diodes used for signal detection?
What is the approximate knee voltage for germanium?
Which formula gives the static resistance of a diode?
