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Diffusion Current in a P-n Junction is Greater than the Drift Current in Magnitude

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प्रश्न

Diffusion current in a p-n junction is greater than the drift current in magnitude

पर्याय

  •  if the junction is forward-biased

  • if the junction is reverse-biased

  •  if the junction is unbiased

  •  in no case.

MCQ
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उत्तर

if the junction is forward-biassed

In the forward biassing of a p−n junction, the positive terminal of the battery is connected to the p side of the p−n junction and the negative terminal of the battery is connected to the n side of the p−n junction. As a result, electrons in the n side of the p−njunction are repelled by the negative terminal of the battery and move to the p side, where the positive terminal of the battery attracts the electrons. Similarly, holes from the p side of the p−n junction are repelled by the positive terminal of the battery and move to the n side, where the negative terminal of the battery attracts the holes. Thus, they give diffusion current across the p−n junction. 

In case of reverse biassing, no conduction takes place across the junction because of the diffusion of majority carriers. Hence, there is no diffusion current.
If the junction is unbiased, then diffusion current is initially maximum. But at equilibrium, diffusion current becomes equal to drift current.

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  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 45: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१७]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
MCQ | Q 10 | पृष्ठ ४१७

संबंधित प्रश्‍न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


Write the two processes that take place in the formation of a p-n junction.


A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


If the two ends of a p-n junction are joined by a wire,


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


p-n junction diode is formed


During the formation of a p-n junction ______.


In p-n junction diode ______.


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