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प्रश्न
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
पर्याय
circuit 1 and circuit 2
circuit 2 and circuit 3
circuit 3 and circuit 1
circuit 1 only.
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उत्तर
circuit 2 and circuit 3
In circuit 1, one diode is forward biassed and the other diode is reverse biassed.
The forward-biassed diode offers zero resistance (ideally) to the current flow, so it can be replaced by a short circuit. The voltage drop across the first diode will be zero. The second diode is reverse biassed, so it can be replaced by an open circuit; hence, the voltage drop across this diode will be maximum.
In circuit 2, both the diodes are forward biassed, so they can be replaced by short circuits; hence, the voltage drop across both of them will be minimum and equal.
In circuit 3, both the diodes are reverse biassed, so both can be replaced by open circuits; hence, the voltage drop across both of them will be maximum and equal.
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संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
If the two ends of a p-n junction are joined by a wire,
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
