Advertisements
Advertisements
प्रश्न
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in

पर्याय
circuit 1 and circuit 2
circuit 2 and circuit 3
circuit 3 and circuit 1
circuit 1 only.
Advertisements
उत्तर
circuit 2 and circuit 3
In circuit 1, one diode is forward biassed and the other diode is reverse biassed.
The forward-biassed diode offers zero resistance (ideally) to the current flow, so it can be replaced by a short circuit. The voltage drop across the first diode will be zero. The second diode is reverse biassed, so it can be replaced by an open circuit; hence, the voltage drop across this diode will be maximum.
In circuit 2, both the diodes are forward biassed, so they can be replaced by short circuits; hence, the voltage drop across both of them will be minimum and equal.
In circuit 3, both the diodes are reverse biassed, so both can be replaced by open circuits; hence, the voltage drop across both of them will be maximum and equal.
APPEARS IN
संबंधित प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Find the currents through the resistance in the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
In a semiconductor diode, the barrier potential offers opposition to only ______.
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
