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In a P-n Junction, a Potential Barrier of 250 Mev Exists Across the Junction. a Hole with a Kinetic Energy of 300 Mev Approaches the Junction.

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प्रश्न

In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.

टीपा लिहा
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उत्तर

Given:
Potential barrier, d = 250 meV
Initially,
Kinetic energy of a hole = 330 meV
We know that the kinetic energy of a hole decreases when the junction is forward biassed (because of the energy loss in crossing the junction).
Also, the kinetic energy of a hole increases when the junction is reverse biassed (because reverse bias voltage pushes the hole on the n-side towards the junction) in the given the p-n junction diode.

(a) The kinetic energy of a hole decreases under forward bias.
∴ Final kinetic energy = (300 − 250) meV
                                     = 50 meV
(b) The kinetic energy of a hole increases under reverse bias.
∴ Final kinetic energy = (300 + 250) meV
                                     = 550 meV

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  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
Exercises | Q 18 | पृष्ठ ४१९

संबंधित प्रश्‍न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


The drift current in a p-n junction is


The diffusion current in a p-n junction is


Diffusion current in a p-n junction is greater than the drift current in magnitude


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


In a semiconductor diode, the barrier potential offers opposition to only ______.


p-n junction diode is formed


During the formation of a p-n junction ______.


In p-n junction diode ______.


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