Advertisements
Advertisements
प्रश्न
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
Advertisements
उत्तर
Given:
Potential barrier, d = 250 meV
Initially,
Kinetic energy of a hole = 330 meV
We know that the kinetic energy of a hole decreases when the junction is forward biassed (because of the energy loss in crossing the junction).
Also, the kinetic energy of a hole increases when the junction is reverse biassed (because reverse bias voltage pushes the hole on the n-side towards the junction) in the given the p-n junction diode.
(a) The kinetic energy of a hole decreases under forward bias.
∴ Final kinetic energy = (300 − 250) meV
= 50 meV
(b) The kinetic energy of a hole increases under reverse bias.
∴ Final kinetic energy = (300 + 250) meV
= 550 meV
APPEARS IN
संबंधित प्रश्न
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
The drift current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in

A hole diffuses from the p-side to the n-side in a p-n junction. This means that
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
The depletion layer in the p-n junction diode is caused by ______.
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
