Advertisements
Advertisements
प्रश्न
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
Advertisements
उत्तर
Given:
Drift current (current under reverse bias), i1 = 25 µA
Forward bias voltage, V = 200 mV
Net current under forward bias, i2 = 75 µA
(a) When the p‒n junction is in unbiased condition, no net current flows across the junction.
i.e. Drift current = Diffusion current
∴ Diffusion current = 25 µA
(b) Under reverse bias, the built in the potential and applied voltage opposes the motion of the majority carriers across the junction.
Thus, the diffusion current becomes zero.
(c) Under forward bias, the voltage supports the motion of majority carriers across the junction.
Let the actual current be x.
So,
(x − Drift current) = Forward-biassed current
\[\Rightarrow x - 25 \mu \text{ A }= 75 \mu \text{A}\]
\[ \Rightarrow x = (75 + 25) \mu \text{ A }\]
\[ \Rightarrow x = 100 \mu \text{ A }\]
APPEARS IN
संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
If the two ends of a p-n junction are joined by a wire,
The diffusion current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

Find the currents through the resistance in the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
