Advertisements
Advertisements
प्रश्न
Write the two processes that take place in the formation of a p-n junction.
Name two important processes involved in the formation of a p-n junction diode.
Advertisements
उत्तर
The processes of "diffusion" and "drift" are critical in a p-n junction. When the p and n-sides come into contact, the majority of carriers "diffuse" from a high concentration to a low concentration. Electrons move and combine with holes from the n-side to the p-side. Holes migrate from the p-side to the n-side in the same way that electrons and holes do at the junction. A "depletion region" is formed when the near junction area runs out of carriers and becomes charged. Current "diffusion" is caused by current "diffusion."
In the depletion area, the charge produces an electric field. The electric field creates a flow of minority carriers in the 'depletion' region. The produced current is known as "drift current," and it is referred to as drift. The directions of "diffusion and drift current" are reversed.
APPEARS IN
संबंधित प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
The diffusion current in a p-n junction is
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in

When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

In a semiconductor diode, the barrier potential offers opposition to only ______.
