मराठी

Write the two processes that take place in the formation of a p-n junction.

Advertisements
Advertisements

प्रश्न

Write the two processes that take place in the formation of a p-n junction.

Name two important processes involved in the formation of a p-n junction diode.

टीपा लिहा
Advertisements

उत्तर

The processes of "diffusion" and "drift" are critical in a p-n junction. When the p and n-sides come into contact, the majority of carriers "diffuse" from a high concentration to a low concentration. Electrons move and combine with holes from the n-side to the p-side. Holes migrate from the p-side to the n-side in the same way that electrons and holes do at the junction. A "depletion region" is formed when the near junction area runs out of carriers and becomes charged. Current "diffusion" is caused by current "diffusion."

In the depletion area, the charge produces an electric field. The electric field creates a flow of minority carriers in the 'depletion' region. The produced current is known as "drift current," and it is referred to as drift. The directions of "diffusion and drift current" are reversed.

shaalaa.com
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
2016-2017 (March) Delhi Set 1

संबंधित प्रश्‍न

How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


Diffusion current in a p-n junction is greater than the drift current in magnitude


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×