मराठी

Write the two processes that take place in the formation of a p-n junction.

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प्रश्न

Write the two processes that take place in the formation of a p-n junction.

Name two important processes involved in the formation of a p-n junction diode.

टीपा लिहा
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उत्तर

The processes of "diffusion" and "drift" are critical in a p-n junction. When the p and n-sides come into contact, the majority of carriers "diffuse" from a high concentration to a low concentration. Electrons move and combine with holes from the n-side to the p-side. Holes migrate from the p-side to the n-side in the same way that electrons and holes do at the junction. A "depletion region" is formed when the near junction area runs out of carriers and becomes charged. Current "diffusion" is caused by current "diffusion."

In the depletion area, the charge produces an electric field. The electric field creates a flow of minority carriers in the 'depletion' region. The produced current is known as "drift current," and it is referred to as drift. The directions of "diffusion and drift current" are reversed.

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2016-2017 (March) Delhi Set 1

संबंधित प्रश्‍न

Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


The drift current in a p-n junction is


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


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Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?


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