Advertisements
Advertisements
प्रश्न
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Advertisements
उत्तर
Given:
Base current gain, \[\beta = 50\]
Change in base current, \[\delta I_b = 50 \mu A\]
Load resistance, \[R_L\] = 2 kΩ
Input resistance, \[R_i\] = 0.50 kΩ
(a) The change in output voltage is given by
\[V_0 = I_c \times R_L \]
\[ \because I_c = \beta \times I_b \]
\[ \therefore V_0 = \beta \times I_b \times R_L \]
\[ \Rightarrow V_0 = 50 \times 50 \mu A \times 2 k\Omega\]
\[ \Rightarrow V_0 = 5 V\]
(b) The change in input voltage is given by
\[\delta V_i = \delta l_b \times R_i \]
\[ \Rightarrow \delta V_i = 50 \times {10}^{- 6} \times 5 \times {10}^2 \]
\[ \Rightarrow \delta V_i = 25 \times {10}^{- 3} \]
\[ \Rightarrow \delta V_i = 25 \text{ mV}\]
(c) Power gain is given by
\[\beta^2 \times \frac{R_L}{R_i}\]
\[ \Rightarrow 2500 \times \frac{2}{0 . 5}\]
\[ \Rightarrow 2500 \times \frac{20}{5} = {10}^4\]
APPEARS IN
संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
If the two ends of a p-n junction are joined by a wire,
Diffusion current in a p-n junction is greater than the drift current in magnitude
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.

Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
p-n junction diode is formed
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
