Advertisements
Advertisements
प्रश्न
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Advertisements
उत्तर
(a) From the circuit diagram, it can be said that the diode is reverse biassed, with applied voltage of 5.0 V.
Under reverse bias condition,
Current in the circuit = Drift current
So, the current in the circuit is 20 µA.
(b) Voltage across the diode will be equal to the voltage of the battery minus the voltage drop across the 20 ohm resistor.
\[\Rightarrow V = 5 - iR\]
\[ \Rightarrow V = 5 - (20 \times 20 \times {10}^{- 6} )\]
\[ \Rightarrow V = 5 - (4 \times {10}^{- 4} )\]
\[ \Rightarrow V = {10}^{- 4} (50000 - 4)\]
\[ \Rightarrow V = 49996 \times {10}^{- 4} \]
\[ \Rightarrow V = 4 . 9996 V \cong 5\] V
APPEARS IN
संबंधित प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
Diffusion current in a p-n junction is greater than the drift current in magnitude
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
