Advertisements
Advertisements
प्रश्न
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Advertisements
उत्तर
(a) From the circuit diagram, it can be said that the diode is reverse biassed, with applied voltage of 5.0 V.
Under reverse bias condition,
Current in the circuit = Drift current
So, the current in the circuit is 20 µA.
(b) Voltage across the diode will be equal to the voltage of the battery minus the voltage drop across the 20 ohm resistor.
\[\Rightarrow V = 5 - iR\]
\[ \Rightarrow V = 5 - (20 \times 20 \times {10}^{- 6} )\]
\[ \Rightarrow V = 5 - (4 \times {10}^{- 4} )\]
\[ \Rightarrow V = {10}^{- 4} (50000 - 4)\]
\[ \Rightarrow V = 49996 \times {10}^{- 4} \]
\[ \Rightarrow V = 4 . 9996 V \cong 5\] V
APPEARS IN
संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
The diffusion current in a p-n junction is
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
In a semiconductor diode, the barrier potential offers opposition to only ______.
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
