हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

Calculate the Current Through the Circuit and the Potential Difference Across the Diode Shown in Figure. the Drift Current for the Diode is 20 µA.

Advertisements
Advertisements

प्रश्न

Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.

टिप्पणी लिखिए
Advertisements

उत्तर

(a) From the circuit diagram, it can be said that the diode is reverse biassed, with applied voltage of 5.0 V.
Under reverse bias condition, 
Current in the circuit = Drift current
So, the current in the circuit is 20 µA.

(b) Voltage across the diode will be equal to the voltage of the battery minus the voltage drop across the 20 ohm resistor.

\[\Rightarrow V = 5 - iR\] 

\[ \Rightarrow V = 5 - (20 \times 20 \times  {10}^{- 6} )\] 

\[ \Rightarrow V = 5 - (4 \times  {10}^{- 4} )\] 

\[ \Rightarrow V =  {10}^{- 4} (50000 - 4)\] 

\[ \Rightarrow V = 49996 \times  {10}^{- 4} \] 

\[ \Rightarrow V = 4 . 9996  V \cong 5\]  V

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Exercises | Q 23 | पृष्ठ ४२०

संबंधित प्रश्न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Write the two processes that take place in the formation of a p-n junction.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


If the two ends of a p-n junction are joined by a wire,


The diffusion current in a p-n junction is


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


During the formation of a p-n junction ______.


Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×