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प्रश्न
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
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संबंधित प्रश्न
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
The diffusion current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
