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Draw the Current-voltage Characteristics for the Device Show in Figure Between the Terminals a and B. - Physics

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प्रश्न

Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)

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उत्तर

(a) If a battery is connected between terminals A and B, with positive terminal connected to point A and negative terminal connected to point B, then the diode will get forward biassed by the applied voltage. So, the current voltage graph for this circuit will be the same as that of the characteristic curves of a forward-biassed diode.

(b) If a battery is connected between terminals A and B, with positive terminal connected to point A and negative terminal connected to point B, then the upper diode will get forward biassed and the lower diode will get reverse biassed by the applied voltage. So, this lower branch can be replaced by an open circuit; hence, the current flow through this branch will be zero. The current flows only through the upper diode, so the circuit on simplification will become identical to the circuit in part (a). Hence, the current voltage graph for this circuit will be the same as that of the characteristic curves of a forward-biassed diode. 

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p-n Junction
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 23 Semiconductors and Semiconductor Devices
Exercises | Q 29 | पृष्ठ ४२०

संबंधित प्रश्न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


The drift current in a p-n junction is


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A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


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Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


In a semiconductor diode, the barrier potential offers opposition to only ______.


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