Advertisements
Advertisements
प्रश्न
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Advertisements
उत्तर
Given:
Change in the base current, \[\delta I_b = (80 - 30) \mu \text{A}\]
Change in the collector current, \[\delta I_c = (3 . 5 - 1) \] mA
Thus,
\[\beta = \left( \frac{\delta l_c}{\delta l_b} \right) \text{at constant V}_{cc} \]
\[ \Rightarrow \beta = \frac{2 . 5 \times {10}^{- 3}}{50 \times {10}^{- 6}}\]
\[ \Rightarrow \beta = \frac{250}{50} = 50\]
APPEARS IN
संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
The drift current in a p-n junction is
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
The depletion layer in the p-n junction diode is caused by ______.
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.
