Advertisements
Advertisements
प्रश्न
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Advertisements
उत्तर
Given:
Change in the base current, \[\delta I_b = (80 - 30) \mu \text{A}\]
Change in the collector current, \[\delta I_c = (3 . 5 - 1) \] mA
Thus,
\[\beta = \left( \frac{\delta l_c}{\delta l_b} \right) \text{at constant V}_{cc} \]
\[ \Rightarrow \beta = \frac{2 . 5 \times {10}^{- 3}}{50 \times {10}^{- 6}}\]
\[ \Rightarrow \beta = \frac{250}{50} = 50\]
APPEARS IN
संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Write the two processes that take place in the formation of a p-n junction.
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The depletion layer in the p-n junction diode is caused by ______.
p-n junction diode is formed
Zener breakdown occurs in a p-n junction having p and n both:
