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प्रश्न
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
विकल्प
Breakdown voltage
0.0 V
0.3V
0.7V
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उत्तर
Current through a reverse-biased p-n junction increases abruptly at: Breakdown voltage
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संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
The drift current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The depletion layer in the p-n junction diode is caused by ______.
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
