English

Choose the correct option. Current through a reverse-biased p-n junction increases abruptly at:

Advertisements
Advertisements

Question

Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:

Options

  • Breakdown voltage

  • 0.0 V

  • 0.3V

  • 0.7V

MCQ
Advertisements

Solution

Current through a reverse-biased p-n junction increases abruptly at: Breakdown voltage

shaalaa.com
  Is there an error in this question or solution?
Chapter 14: Semiconductors - Exercises [Page 256]

APPEARS IN

Balbharati Physics [English] Standard 11 Maharashtra State Board
Chapter 14 Semiconductors
Exercises | Q 1. iii) | Page 256

RELATED QUESTIONS

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


The diffusion current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


The depletion layer in the p-n junction diode is caused by ______.


During the formation of a p-n junction ______.


For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.


In p-n junction diode ______.


What is a p-n junction diode?


Which process moves charge carriers from a higher concentration to a lower concentration?


In which direction is the electric field established by the fixed ions?


How does the interface between physically joined p-type and n-type slabs act on charge carriers?


Which semiconductor devices use the p-n junction principle?


What is the approximate knee voltage for silicon?


Which formula gives the static resistance of a diode?


Which formula gives the dynamic resistance of a diode?


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×