Advertisements
Advertisements
Question
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Advertisements
Solution
(a) From the circuit diagram, it can be said that the diode is reverse biassed, with applied voltage of 5.0 V.
Under reverse bias condition,
Current in the circuit = Drift current
So, the current in the circuit is 20 µA.
(b) Voltage across the diode will be equal to the voltage of the battery minus the voltage drop across the 20 ohm resistor.
\[\Rightarrow V = 5 - iR\]
\[ \Rightarrow V = 5 - (20 \times 20 \times {10}^{- 6} )\]
\[ \Rightarrow V = 5 - (4 \times {10}^{- 4} )\]
\[ \Rightarrow V = {10}^{- 4} (50000 - 4)\]
\[ \Rightarrow V = 49996 \times {10}^{- 4} \]
\[ \Rightarrow V = 4 . 9996 V \cong 5\] V
APPEARS IN
RELATED QUESTIONS
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
If the two ends of a p-n junction are joined by a wire,
The drift current in a p-n junction is
The diffusion current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
In a semiconductor diode, the barrier potential offers opposition to only ______.
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
In p-n junction diode ______.
