English
Karnataka Board PUCPUC Science 2nd PUC Class 12

In a p-n junction diode, the current I can be expressed as I ="I"_0 exp ("eV"/(2"k"_"BT") - 1) where I0 is called the reverse saturation current,

Advertisements
Advertisements

Question

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?

Numerical
Advertisements

Solution

a) In a p-n junction diode, the expression for current is given as:

I = `"I"_0 exp("eV"/(2"k"_"B" "T") - 1)`

Where,

I0 = Reverse saturation current = 5 × 10−12 A

T = Absolute temperature = 300 K

kB = Boltzmann constant = 8.6 × 10−5 eV/K = 1.376 × 10−23 J K−1

V = Voltage across the diode

(a) Forward voltage, V = 0.6 V

= `5 xx 10^(-12)[exp ((1.6xx 10^(-19) xx 0.6)/(1.376 xx 10^(-23) xx 300))-1]`

∴ Current, I 

`= 5 xx 10^(-12) xx   exp [22.36] = 0.0256 A`

Therefore, the forward current is about 0.0256 A.

(b) For forward voltage, V = 0.7 V, we can write:

I' =`5 xx 10^(-12) [exp ((1.6 xx 10^(-19) xx 0.7)/(1.376 xx 10^(-23) xx 300)) - 1]`

`= 5 xx 10^(-12) xx exp [26.25] = 1.257` A

Hence, the increase in current, ΔI = I' − I

= 1.257 − 0.0256 = 1.23 A

(c) Dynamic resistance  = `"Change in voltage"/"Change in Current"`

`= (0.7 - 0.6)/1.23 = 0.1/1.23 = 0.081 "Ω"`

(d) If the reverse bias voltage changes from 1 V to 2 V, then the current (I) will almost remain equal to I0 in both cases. Therefore, the dynamic resistance in the reverse bias will be infinite.

shaalaa.com
  Is there an error in this question or solution?
Chapter 14: Semiconductor Electronics: Materials, Devices and Simple Circuits - Exercise [Page 511]

APPEARS IN

NCERT Physics Part I and II [English] Class 12
Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits
Exercise | Q 14 | Page 511
NCERT Physics Part I and II [English] Class 12
Chapter 14 Semiconductor Electronics: Materials, Devices and Simple Circuits
Exercise | Q 14.10 | Page 497

RELATED QUESTIONS

Write the two processes that take place in the formation of a p-n junction.


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


The drift current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


The formation of the depletion region in a p-n junction diode is due to ______.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×