Advertisements
Advertisements
Question
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Advertisements
Solution
It is a heavily doped p-n junction. As a result, the depletion region formed is very thin and the electric field of the junction is extremely high even for a small reverse bias voltage.
The I-V characteristics of a Zener diode are shown in the figure below:
APPEARS IN
RELATED QUESTIONS
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
In a semiconductor diode, the barrier potential offers opposition to only ______.
The formation of the depletion region in a p-n junction diode is due to ______.
What is a p-n junction diode?
What is drift?
What is the net current in zero bias when diffusion and drift currents balance?
