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A Zener Diode is Fabricated by Heavily Doping Both P- and N- Sides of the Junction. Explain, Why? - Physics

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प्रश्न

A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?

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उत्तर

It is a heavily doped p-n junction. As a result, the depletion region formed is very thin and the electric field of the junction is extremely high even for a small reverse bias voltage.  

The I-V characteristics of a Zener diode are shown in the figure below:

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2016-2017 (March) Delhi Set 2

संबंधित प्रश्न

Write the two processes that take place in the formation of a p-n junction.


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


p-n junction diode is formed


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