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प्रश्न
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
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उत्तर
It is a heavily doped p-n junction. As a result, the depletion region formed is very thin and the electric field of the junction is extremely high even for a small reverse bias voltage.
The I-V characteristics of a Zener diode are shown in the figure below:
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संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
The drift current in a p-n junction is
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
In a semiconductor diode, the barrier potential offers opposition to only ______.
For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.
