हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

In A P-n Junction, (A) New Holes and Conduction Electrons Are Produced Continuously Throughout the Material - Physics

Advertisements
Advertisements

प्रश्न

In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.

टिप्पणी लिखिए
Advertisements

उत्तर

(a) new holes and conduction electrons are produced continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region

In a p‒n junction diode, diffusion current flows because of the diffusion of holes from the p side to the n side and of electrons from the n side to the p side. The current flowing in the diode due to the diffusion of charge carriers across the junction is called the diffusion current. The current flowing in the diode due to the movement of minority carriers across the junction due to their thermal energy is called the drift current. In an unbiased diode, the net current flowing across the junction is zero due to the cancellation of the drift current by the diffusion current. For the flow of diffusion and drift currents, holes and electrons are produced continuously throughout the material. When a hole crosses the junction, it combines with an electron on the n side. As the depletion region is devoid of free charge carriers, this recombination never takes place inside the depletion region.

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 23: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१८]

APPEARS IN

एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 23 Semiconductors and Semiconductor Devices
MCQ | Q 3 | पृष्ठ ४१८

संबंधित प्रश्न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


If the two ends of a p-n junction are joined by a wire,


The drift current in a p-n junction is


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×