हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

In a P-n Junction, a Potential Barrier of 250 Mev Exists Across the Junction. a Hole with a Kinetic Energy of 300 Mev Approaches the Junction.

Advertisements
Advertisements

प्रश्न

In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.

टिप्पणी लिखिए
Advertisements

उत्तर

Given:
Potential barrier, d = 250 meV
Initially,
Kinetic energy of a hole = 330 meV
We know that the kinetic energy of a hole decreases when the junction is forward biassed (because of the energy loss in crossing the junction).
Also, the kinetic energy of a hole increases when the junction is reverse biassed (because reverse bias voltage pushes the hole on the n-side towards the junction) in the given the p-n junction diode.

(a) The kinetic energy of a hole decreases under forward bias.
∴ Final kinetic energy = (300 − 250) meV
                                     = 50 meV
(b) The kinetic energy of a hole increases under reverse bias.
∴ Final kinetic energy = (300 + 250) meV
                                     = 550 meV

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Exercises | Q 18 | पृष्ठ ४१९

संबंधित प्रश्न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


p-n junction diode is formed


Zener breakdown occurs in a p-n junction having p and n both:


Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?


Why does microscopic roughness prevent a proper crystal lattice from forming between separate p-type and n-type slabs?


How does the interface between physically joined p-type and n-type slabs act on charge carriers?


How is a true p-n junction created instead of physically joining separate semiconductor pieces?


What is the use of diodes in power supplies and chargers?


Which semiconductor devices use the p-n junction principle?


Which formula gives the static resistance of a diode?


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×