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In a P-n Junction, a Potential Barrier of 250 Mev Exists Across the Junction. a Hole with a Kinetic Energy of 300 Mev Approaches the Junction.

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प्रश्न

In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.

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उत्तर

Given:
Potential barrier, d = 250 meV
Initially,
Kinetic energy of a hole = 330 meV
We know that the kinetic energy of a hole decreases when the junction is forward biassed (because of the energy loss in crossing the junction).
Also, the kinetic energy of a hole increases when the junction is reverse biassed (because reverse bias voltage pushes the hole on the n-side towards the junction) in the given the p-n junction diode.

(a) The kinetic energy of a hole decreases under forward bias.
∴ Final kinetic energy = (300 − 250) meV
                                     = 50 meV
(b) The kinetic energy of a hole increases under reverse bias.
∴ Final kinetic energy = (300 + 250) meV
                                     = 550 meV

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अध्याय 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Exercises | Q 18 | पृष्ठ ४१९

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