Advertisements
Advertisements
प्रश्न
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

Advertisements
उत्तर
According to the Wheatstone bridge principle, if the bridge is balanced, then the current flow across the central resistor is zero. So, to simplify the circuit, we can remove the central resistor.
The given circuit is also balanced, so there is no current through the diode.
Hence, the net resistance of the circuit is given by
\[R_P = \frac{R_1 R_2}{R_1 + R_2}\]
\[\text{For } R_1 = R_2 = R, \]
\[ R_P = \frac{R}{2} = \frac{40}{2}\]
\[ \Rightarrow R_P = 20 \Omega\]
APPEARS IN
संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
The drift current in a p-n junction is
The diffusion current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Find the currents through the resistance in the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
The depletion layer in the p-n junction diode is caused by ______.
In a semiconductor diode, the barrier potential offers opposition to only ______.
Zener breakdown occurs in a p-n junction having p and n both:
During the formation of a p-n junction ______.
