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प्रश्न
The drift current in a p-n junction is
विकल्प
from the n-side to the p-side
from the p-side to the n-side
from the p-side to the side if the junction is forward-biased and the opposite direction if it is reverse-biased
from the p-side to the n-side if the junction is forward-baised and in the opposite direction if it is reverse-biased.
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उत्तर
from the n-side to the p-side
After the diffusion of majority charge carriers across a p‒n junction, an electric field is set up because of the accumulation of immobile ions at the junction. These further oppose the motion of majority charge carriers across the junction. As a result, electrons from the p region start moving to the n region and holes from the n region start moving to the p region. This constitutes the drift current. As the direction of the current is opposite to the direction of the motion of the electrons, the direction of the drift current is from the n side to the p side.
In forward biasing, there is no movement of electrons from the p region to the n region and of holes from the n region to the p region. Hence, there is not drift current.
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संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
Diffusion current in a p-n junction is greater than the drift current in magnitude
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The depletion layer in the p-n junction diode is caused by ______.
In a semiconductor diode, the barrier potential offers opposition to only ______.
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
