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प्रश्न
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
विकल्प
a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band
a conduction electron on the p-side jumps to a broken bond to complete it
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the n-side to complete it.
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उत्तर
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
A hole diffuses from the p side to the n side in a p−n junction; that is, an electron moves from the n side to the p side. This implies that a bond is broken on the n side. As the electron travels towards the p side, which is rich in holes, it combines with a hole. A hole is created because of the deficiency of one electron. So, when an electron combines with a hole, it completes that bond.
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संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
Diffusion current in a p-n junction is greater than the drift current in magnitude
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
The depletion layer in the p-n junction diode is caused by ______.
During the formation of a p-n junction ______.
For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.
What is dynamic resistance?
When p-type and n-type regions are formed in a single crystal, which carriers initially diffuse from each side?
In which direction is the electric field established by the fixed ions?
Which semiconductor devices use the p-n junction principle?
