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प्रश्न
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
विकल्प
a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band
a conduction electron on the p-side jumps to a broken bond to complete it
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the n-side to complete it.
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उत्तर
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
A hole diffuses from the p side to the n side in a p−n junction; that is, an electron moves from the n side to the p side. This implies that a bond is broken on the n side. As the electron travels towards the p side, which is rich in holes, it combines with a hole. A hole is created because of the deficiency of one electron. So, when an electron combines with a hole, it completes that bond.
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संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
If the two ends of a p-n junction are joined by a wire,
The drift current in a p-n junction is
The diffusion current in a p-n junction is
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
p-n junction diode is formed
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
