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प्रश्न
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
विकल्प
a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band
a conduction electron on the p-side jumps to a broken bond to complete it
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the n-side to complete it.
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उत्तर
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
A hole diffuses from the p side to the n side in a p−n junction; that is, an electron moves from the n side to the p side. This implies that a bond is broken on the n side. As the electron travels towards the p side, which is rich in holes, it combines with a hole. A hole is created because of the deficiency of one electron. So, when an electron combines with a hole, it completes that bond.
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संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
The depletion layer in the p-n junction diode is caused by ______.
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
In p-n junction diode ______.
