हिंदी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान कक्षा ११

A Load Resistor of 2kω is Connected in the Collector Branch of an Amplifier Circuit Using a Transistor Common-emitter Mode. the Current Gain β = 50. the Input Resistance of the Transistor is 0.50 Kω. - Physics

Advertisements
Advertisements

प्रश्न

A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?

टिप्पणी लिखिए
Advertisements

उत्तर

Given:
Base current gain,  \[\beta = 50\]

Change in base current, \[\delta I_b  = 50  \mu A\]

Load resistance, \[R_L\] = 2 kΩ
Input resistance, \[R_i\]  = 0.50 kΩ

(a) The change in output voltage is given by

\[V_0  =  I_c  \times  R_L \] 

\[ \because  I_c  = \beta \times  I_b \] 

\[ \therefore  V_0  = \beta \times  I_b  \times  R_L \] 

\[ \Rightarrow  V_0  = 50 \times 50  \mu A \times 2  k\Omega\] 

\[ \Rightarrow  V_0  = 5  V\]

(b) The change in input voltage is given by

\[\delta V_i  = \delta l_b  \times  R_i \] 

\[ \Rightarrow \delta V_i  = 50 \times  {10}^{- 6}  \times 5 \times  {10}^2 \] 

\[ \Rightarrow \delta V_i  = 25 \times  {10}^{- 3} \] 

\[ \Rightarrow \delta V_i  = 25 \text{  mV}\] 

(c) Power gain is given by 

\[\beta^2  \times \frac{R_L}{R_i}\] 

\[ \Rightarrow 2500 \times \frac{2}{0 . 5}\] 

\[ \Rightarrow 2500 \times \frac{20}{5} =  {10}^4\]

shaalaa.com
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

APPEARS IN

एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 23 Semiconductors and Semiconductor Devices
Exercises | Q 32 | पृष्ठ ४२०

संबंधित प्रश्न

A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


The drift current in a p-n junction is


The diffusion current in a p-n junction is


Diffusion current in a p-n junction is greater than the drift current in magnitude


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


The depletion layer in the p-n junction diode is caused by ______.


During the formation of a p-n junction ______.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×