Advertisements
Advertisements
प्रश्न
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Advertisements
उत्तर
(a) Given:-
Drift current, i0 = 20 × 10−6 A
Temperature, T = 300 K
Applied voltage, V = 300 mV
The variation in the current with respect to the voltage is given by
\[i = i_0 \left( e^\frac{eV}{KT} - 1 \right)\]
\[ \Rightarrow i = 20 \times {10}^{- 6} \left( e^\frac{0 . 3}{8 . 62 \times 300 \times {10}^{- 5}} - 1 \right)\]
\[ \Rightarrow i = 20 \times {10}^{- 5} \left( e^\frac{100}{8 . 61} - 1 \right)\]
\[ \Rightarrow i = 2 . 18 A \approx 2 \] A
(b) We need to find the voltage at which the current doubles so that the new value of the current becomes 4 A.
\[\Rightarrow 4 = 20 \times {10}^{- 6} \left( e^\frac{eV}{8 . 62 \times 3 \times {10}^{- 3}} - 1 \right)\]
\[ \Rightarrow e^\frac{V \times {10}^3}{8 . 62 \times 3} - 1 = \frac{4 \times {10}^6}{20}\]
\[ \Rightarrow e^\frac{V \times {10}^3}{8 . 62 \times 3} = 200001\]
\[ \Rightarrow \frac{V \times {10}^3}{8 . 62 \times 3} = 12 . 2060\]
\[ \Rightarrow V = \frac{12 . 206 \times 8 . 63 \times 3}{{10}^3}\]
\[ \Rightarrow V = 318 \] mV
APPEARS IN
संबंधित प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
