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Consider a P-n Junction Diode Having the Characteristic I − I 0 ( E E V / K T − 1 ) Where I 0 = 20 μ a . the Diode is Operated at T = 300 K . Find the Current Through the Diode When a Voltage - Physics

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प्रश्न

Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?

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उत्तर

(a) Given:-

Drift current, i0 = 20 × 10−6 A

Temperature, T = 300 K

Applied voltage, V = 300 mV

The variation in the current with respect to the voltage is given by

\[i =  i_0 \left( e^\frac{eV}{KT} - 1 \right)\]

\[ \Rightarrow i = 20 \times  {10}^{- 6} \left( e^\frac{0 . 3}{8 . 62 \times 300 \times {10}^{- 5}} - 1 \right)\]

\[ \Rightarrow i = 20 \times  {10}^{- 5} \left( e^\frac{100}{8 . 61} - 1 \right)\]

\[ \Rightarrow i = 2 . 18  A \approx 2  \] A


(b) We need to find the voltage at which the current doubles so that the new value of the current becomes 4 A.

\[\Rightarrow 4 = 20 \times  {10}^{- 6} \left( e^\frac{eV}{8 . 62 \times 3 \times {10}^{- 3}} - 1 \right)\]

\[ \Rightarrow  e^\frac{V \times {10}^3}{8 . 62 \times 3}  - 1 = \frac{4 \times {10}^6}{20}\]

\[ \Rightarrow  e^\frac{V \times {10}^3}{8 . 62 \times 3}  = 200001\]

\[ \Rightarrow \frac{V \times {10}^3}{8 . 62 \times 3} = 12 . 2060\]

\[ \Rightarrow V = \frac{12 . 206 \times 8 . 63 \times 3}{{10}^3}\]

\[ \Rightarrow V = 318  \] mV

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पाठ 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
पाठ 23 Semiconductors and Semiconductor Devices
Exercises | Q 22 | पृष्ठ ४२०

संबंधित प्रश्‍न

Write the two processes that take place in the formation of a p-n junction.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


The drift current in a p-n junction is


The diffusion current in a p-n junction is


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


In a semiconductor diode, the barrier potential offers opposition to only ______.


p-n junction diode is formed


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The formation of the depletion region in a p-n junction diode is due to ______.


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