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Consider a P-n Junction Diode Having the Characteristic I − I 0 ( E E V / K T − 1 ) Where I 0 = 20 μ a . the Diode is Operated at T = 300 K . Find the Current Through the Diode When a Voltage

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प्रश्न

Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?

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उत्तर

(a) Given:-

Drift current, i0 = 20 × 10−6 A

Temperature, T = 300 K

Applied voltage, V = 300 mV

The variation in the current with respect to the voltage is given by

\[i =  i_0 \left( e^\frac{eV}{KT} - 1 \right)\]

\[ \Rightarrow i = 20 \times  {10}^{- 6} \left( e^\frac{0 . 3}{8 . 62 \times 300 \times {10}^{- 5}} - 1 \right)\]

\[ \Rightarrow i = 20 \times  {10}^{- 5} \left( e^\frac{100}{8 . 61} - 1 \right)\]

\[ \Rightarrow i = 2 . 18  A \approx 2  \] A


(b) We need to find the voltage at which the current doubles so that the new value of the current becomes 4 A.

\[\Rightarrow 4 = 20 \times  {10}^{- 6} \left( e^\frac{eV}{8 . 62 \times 3 \times {10}^{- 3}} - 1 \right)\]

\[ \Rightarrow  e^\frac{V \times {10}^3}{8 . 62 \times 3}  - 1 = \frac{4 \times {10}^6}{20}\]

\[ \Rightarrow  e^\frac{V \times {10}^3}{8 . 62 \times 3}  = 200001\]

\[ \Rightarrow \frac{V \times {10}^3}{8 . 62 \times 3} = 12 . 2060\]

\[ \Rightarrow V = \frac{12 . 206 \times 8 . 63 \times 3}{{10}^3}\]

\[ \Rightarrow V = 318  \] mV

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पाठ 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
Exercises | Q 22 | पृष्ठ ४२०

संबंधित प्रश्‍न

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(c) an n-type semiconductor
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The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


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(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


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(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Answer in detail.

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