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प्रश्न
The formation of the depletion region in a p-n junction diode is due to ______.
पर्याय
movement of dopant atoms
diffusion of both electrons and holes
drift of electrons only
the drift of holes only
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उत्तर
The formation of the depletion region in a p-n junction diode is due to the diffusion of both electrons and holes.
Explanation:
Charge diffusion is what creates the depletion area. holes diffuse across the junction from the p-side to the n-side due to the concentration gradient, whereas electrons diffuse from the n-side to the p-side. Near the junction, the holes and the electrons that are diffusely moving in the same direction unite.
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संबंधित प्रश्न
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
Zener breakdown occurs in a p-n junction having p and n both:
