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प्रश्न
The formation of the depletion region in a p-n junction diode is due to ______.
विकल्प
movement of dopant atoms
diffusion of both electrons and holes
drift of electrons only
the drift of holes only
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उत्तर
The formation of the depletion region in a p-n junction diode is due to the diffusion of both electrons and holes.
Explanation:
Charge diffusion is what creates the depletion area. holes diffuse across the junction from the p-side to the n-side due to the concentration gradient, whereas electrons diffuse from the n-side to the p-side. Near the junction, the holes and the electrons that are diffusely moving in the same direction unite.
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संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Diffusion current in a p-n junction is greater than the drift current in magnitude
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
p-n junction diode is formed
Zener breakdown occurs in a p-n junction having p and n both:
In p-n junction diode ______.
