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When A P-n Junction is Reverse-biased, the Current Becomes Almost Constant at 25 µA. When It is Forward-biased at 200 Mv, a Current of 75 µA is Obtained. Find the Magnitude of Diffusion Current - Physics

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प्रश्न

When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.

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उत्तर

Given:
Drift current (current under reverse bias), i1 = 25 µA
Forward bias voltage, V = 200 mV
Net current under forward bias, i2 = 75 µA

(a) When the p‒n junction is in unbiased condition, no net current flows across the junction.
i.e. Drift current = Diffusion current
∴ Diffusion current = 25 µA

(b) Under reverse bias, the built in the potential and applied voltage opposes the motion of the majority carriers across the junction.
Thus, the diffusion current becomes zero.

(c) Under forward bias, the voltage supports the motion of majority carriers across the junction.
Let the actual current be x.
So,
(x − Drift current) = Forward-biassed current

\[\Rightarrow x - 25  \mu \text{ A }= 75  \mu \text{A}\] 

\[ \Rightarrow x = (75 + 25)  \mu \text{ A }\] 

\[ \Rightarrow x = 100  \mu \text{ A }\]

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p-n Junction
  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 23 Semiconductors and Semiconductor Devices
Exercises | Q 19 | पृष्ठ ४१९

संबंधित प्रश्न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


The drift current in a p-n junction is


The diffusion current in a p-n junction is


Diffusion current in a p-n junction is greater than the drift current in magnitude


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


The formation of the depletion region in a p-n junction diode is due to ______.


During the formation of a p-n junction ______.


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