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When A P-n Junction is Reverse-biased, the Current Becomes Almost Constant at 25 µA. When It is Forward-biased at 200 Mv, a Current of 75 µA is Obtained. Find the Magnitude of Diffusion Current

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प्रश्न

When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.

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उत्तर

Given:
Drift current (current under reverse bias), i1 = 25 µA
Forward bias voltage, V = 200 mV
Net current under forward bias, i2 = 75 µA

(a) When the p‒n junction is in unbiased condition, no net current flows across the junction.
i.e. Drift current = Diffusion current
∴ Diffusion current = 25 µA

(b) Under reverse bias, the built in the potential and applied voltage opposes the motion of the majority carriers across the junction.
Thus, the diffusion current becomes zero.

(c) Under forward bias, the voltage supports the motion of majority carriers across the junction.
Let the actual current be x.
So,
(x − Drift current) = Forward-biassed current

\[\Rightarrow x - 25  \mu \text{ A }= 75  \mu \text{A}\] 

\[ \Rightarrow x = (75 + 25)  \mu \text{ A }\] 

\[ \Rightarrow x = 100  \mu \text{ A }\]

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अध्याय 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४१९]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Exercises | Q 19 | पृष्ठ ४१९

संबंधित प्रश्न

Write the two processes that take place in the formation of a p-n junction.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


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Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


If the two ends of a p-n junction are joined by a wire,


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


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The depletion layer in the p-n junction diode is caused by ______.


p-n junction diode is formed


The formation of the depletion region in a p-n junction diode is due to ______.


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