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In A P-n Junction with Open Ends, (A) There is No Systematic Motion of Charge Carries (B) Holes and Conduction Electrons Systematically Go from The P-side To N-side and from The N-side To P-side

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प्रश्न

In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.

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उत्तर

(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side, respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction    

Because of the difference in the concentration of charge carriers in the p−n junction, holes from the p side move to the n side and electrons from the n side move to the pside. This motion of charge carriers gives rise to diffusion current.
Because of this, a negative space charge region is formed in the p region and a positive space region is formed in the n region. This sets up an electric field across the junction. Thus, there is a constant electric field near the junction.
This electric field further opposes the diffusion of majority charge carriers across the junction. As a result, an electron from the p region starts moving to the n region and a hole from the n region starts moving to the p region. This sets up drift current. Thus, there is a systematic flow of charge carriers across the junction. Also, there is no net charge transfer between the two sides.

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अध्याय 45: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१८]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
MCQ | Q 2 | पृष्ठ ४१८

संबंधित प्रश्न

Write the two processes that take place in the formation of a p-n junction.


A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


The diffusion current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


The depletion layer in the p-n junction diode is caused by ______.


p-n junction diode is formed


The formation of the depletion region in a p-n junction diode is due to ______.


In p-n junction diode ______.


What is barrier potential?


How does the interface between physically joined p-type and n-type slabs act on charge carriers?


Which semiconductor devices use the p-n junction principle?


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