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Mention the Important Considerations Required While Fabricating a P-n Junction Diode to Be Used as a Light Emitting Diode (Led). - Physics

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प्रश्न

Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?

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उत्तर

1. The reverse breakdown voltages of LEDs are very low, typically around 5V. So care should be taken while fabricating a pn-junction diode so that the high reverse voltages do not appear across them.

2. There is very little resistance to limit the current in LED. Therefore, a resistor must be used in series with the LED to avoid any damage to it.

The semiconductor used for fabrication of visible LEDs must at least have a band gap of 1.8 eV (spectral range of visible light is from about 0.4 μm to 0.7 μm, i.e., from about 3 eV to 1.8 eV).

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2012-2013 (March) Delhi Set 2

संबंधित प्रश्न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


The diffusion current in a p-n junction is


Diffusion current in a p-n junction is greater than the drift current in magnitude


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


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