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Find the Current Through the Battery in Each of the Circuits Shown in Figure. - Physics

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प्रश्न

Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)

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उत्तर

We know that when a diode is forward biassed, it has zero resistance ideally. So, it can be replaced by a short circuit. When a diode is reverse biassed, it has infinite resistance ideally. So, it can be replaced by an open circuit.


(a) In the given circuit diagram, both diodes are forward biassed. So, the resistance of both of them is zero. Thus, the diode resistance is zero.

\[i = \frac{5}{\frac{10 \times 10}{10 + 10}} = \frac{5}{5} = 1  A\]

(b) One diode is forward biassed and the other is reverse biassed. The reverse-biassed diode is replaced by an open circuit, so no current flows through this branch.
The current passes through the forward-biassed diode only.

\[i = \frac{V}{R_{net}}   =   \frac{5}{10} = 0 . 5  A\]

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  क्या इस प्रश्न या उत्तर में कोई त्रुटि है?
अध्याय 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
अध्याय 23 Semiconductors and Semiconductor Devices
Exercises | Q 27 | पृष्ठ ४२०

संबंधित प्रश्न

Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


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The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


Diffusion current in a p-n junction is greater than the drift current in magnitude


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


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(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


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Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


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p-n junction diode is formed


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