Advertisements
Advertisements
प्रश्न
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Advertisements
उत्तर
We know that when a diode is forward biassed, it has zero resistance ideally. So, it can be replaced by a short circuit. When a diode is reverse biassed, it has infinite resistance ideally. So, it can be replaced by an open circuit.
(a) In the given circuit diagram, both diodes are forward biassed. So, the resistance of both of them is zero. Thus, the diode resistance is zero.
\[i = \frac{5}{\frac{10 \times 10}{10 + 10}} = \frac{5}{5} = 1 A\]
(b) One diode is forward biassed and the other is reverse biassed. The reverse-biassed diode is replaced by an open circuit, so no current flows through this branch.
The current passes through the forward-biassed diode only.
\[i = \frac{V}{R_{net}} = \frac{5}{10} = 0 . 5 A\]
APPEARS IN
संबंधित प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Write the two processes that take place in the formation of a p-n junction.
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
If the two ends of a p-n junction are joined by a wire,
The drift current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?
The depletion layer in the p-n junction diode is caused by ______.
In a semiconductor diode, the barrier potential offers opposition to only ______.
Zener breakdown occurs in a p-n junction having p and n both:
In p-n junction diode ______.
