मराठी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान इयत्ता ११

Find the Current Through the Battery in Each of the Circuits Shown in Figure.

Advertisements
Advertisements

प्रश्न

Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)

टीपा लिहा
Advertisements

उत्तर

We know that when a diode is forward biassed, it has zero resistance ideally. So, it can be replaced by a short circuit. When a diode is reverse biassed, it has infinite resistance ideally. So, it can be replaced by an open circuit.


(a) In the given circuit diagram, both diodes are forward biassed. So, the resistance of both of them is zero. Thus, the diode resistance is zero.

\[i = \frac{5}{\frac{10 \times 10}{10 + 10}} = \frac{5}{5} = 1  A\]

(b) One diode is forward biassed and the other is reverse biassed. The reverse-biassed diode is replaced by an open circuit, so no current flows through this branch.
The current passes through the forward-biassed diode only.

\[i = \frac{V}{R_{net}}   =   \frac{5}{10} = 0 . 5  A\]

shaalaa.com
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
Exercises | Q 27 | पृष्ठ ४२०

संबंधित प्रश्‍न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Write the two processes that take place in the formation of a p-n junction.


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.


The drift current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


In a semiconductor diode, the barrier potential offers opposition to only ______.


Zener breakdown occurs in a p-n junction having p and n both:


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×