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प्रश्न
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
पर्याय
free electrons in the n-region attract them.
they move across the junction by the potential difference.
hole concentration in p-region is more as compared to n-region.
All the above.
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उत्तर
Hole concentration in p-region is more as compared to n-region.
Explanation:
The diffusion of charge carriers across a junction takes place from the region of higher concentration to the region of lower concentration. In this case, the p-region has a greater concentration of holes than the n-region. Hence, in an unbiased p-n junction, holes diffuse from the p-region to the n-region.
संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Write the two processes that take place in the formation of a p-n junction.
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
