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The Drift Current in A P-n Junction is 20.0 µA. Estimate the Number of Electrons Crossing a Cross Section per Second in the Depletion Region. - Physics

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प्रश्न

The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.

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उत्तर

Given: 
Drift current, id = 20 µA = 20 × 10−6 A
Both holes and electrons are moving and contributing to the current flow.
We know that current is the rate of the flow of charge.
Thus, we need to find the number of electrons crossing unit area per second.
Now,
t = 1 s 

\[i_d    = \frac{Q}{T}\] 

\[ \because T = 1  \]s

\[ \therefore  i_d  = Q = \]ne

\[ \Rightarrow n = \frac{i_d}{e}\]

So, the total number of charge carriers crossing the depletion region is given by

\[n = \frac{20 \times {10}^{- 6}}{2 \times 1 . 6 \times {10}^{- 19}}\] 

\[ \Rightarrow n = 6 . 25 \times  {10}^{13}\]

Also, the number of electrons crossing the depletion region is given by

\[n_e  = \frac{n}{2} = \frac{6 . 25 \times {10}^{13}}{2}\] 

\[ \Rightarrow  n_e  = 3 . 1 \times  {10}^{13}\]

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पाठ 23: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Vol. 2 [English] Class 11 and 12
पाठ 23 Semiconductors and Semiconductor Devices
Exercises | Q 20 | पृष्ठ ४२०

संबंधित प्रश्‍न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


If the two ends of a p-n junction are joined by a wire,


The drift current in a p-n junction is


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


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