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When a P-type Impurity is Doped in a Semiconductor, a Large Number of Holes Are Created, this Does Not Make the Semiconductor Charged.

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प्रश्न

When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.

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उत्तर

A p-type semiconductor is formed by doping a group 13 element with group 14 element (Si or Ge). As the group 13 element has only 3 electrons in its valence shell and the group 14 element has 4 electrons in its valence shell, when the group 13 element, say, Al, replaces one Si in the silicon crystal, only 3 covalent bonds are formed by it. And the fourth covalent bond is left in need of one electron. So, it creates a hole. Since the atom as a whole is electriclly neutral, the p-type semiconductor is also neutral.

In a p‒n junction, when the diffusion of holes takes place across the junction because of the difference in the concentration of charge carriers from p to n sides, these holes neutralise some of the electrons on the n side. So, the atom attached with that electron becomes one electron deficient and hence positively charged. This makes the n side of the p‒n junction positively charged and the p side of the p‒n junction negatively charged.

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पाठ 45: Semiconductors and Semiconductor Devices - Short Answers [पृष्ठ ४१७]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
Short Answers | Q 8 | पृष्ठ ४१७

संबंधित प्रश्‍न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


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Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.


The diffusion current in a p-n junction is


Diffusion current in a p-n junction is greater than the drift current in magnitude


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


In a semiconductor diode, the barrier potential offers opposition to only ______.


Zener breakdown occurs in a p-n junction having p and n both:


During the formation of a p-n junction ______.


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