Advertisements
Advertisements
प्रश्न
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
Advertisements
उत्तर
When the temperature of a reverse-biassed p‒n junction is increased, the breaking of bonds takes place because of the increase in the thermal energy of the charge carriers. Drift current is due to the flow of the minority carriers across the junction. So, when a p‒n junction is reverse biassed, the applied voltage supports the flow of minority charge carriers across the junction. Thus, the drift current increases with increase in temperature in a reverse-biassed p‒n junction.
APPEARS IN
संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Write the two processes that take place in the formation of a p-n junction.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
The diffusion current in a p-n junction is
Diffusion current in a p-n junction is greater than the drift current in magnitude
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
p-n junction diode is formed
Why does microscopic roughness prevent a proper crystal lattice from forming between separate p-type and n-type slabs?
How does the interface between physically joined p-type and n-type slabs act on charge carriers?
How is a true p-n junction created instead of physically joining separate semiconductor pieces?
What is the use of diodes in power supplies and chargers?
In which circuits are diodes used for signal detection?
What is the net current in zero bias when diffusion and drift currents balance?
