मराठी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान इयत्ता ११

The Drift Current in a Reverse-biased P-n Junction is Increased in Magnitude If the Temperature of the Junction is Increased. Explain this on the Basis of Creation of Hole-electron Pairs.

Advertisements
Advertisements

प्रश्न

The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.

टीपा लिहा
Advertisements

उत्तर

When the temperature of a reverse-biassed p‒n junction is increased, the breaking of bonds takes place because of the increase in the thermal energy of the charge carriers. Drift current is due to the flow of the minority carriers across the junction. So, when a p‒n junction is reverse biassed, the applied voltage supports the flow of minority charge carriers across the junction. Thus, the drift current increases with increase in temperature in a reverse-biassed p‒n junction.

shaalaa.com
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 45: Semiconductors and Semiconductor Devices - Short Answers [पृष्ठ ४१७]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
Short Answers | Q 9 | पृष्ठ ४१७

संबंधित प्रश्‍न

In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.


In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Write the two processes that take place in the formation of a p-n junction.


A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


The drift current in a p-n junction is


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


In a semiconductor diode, the barrier potential offers opposition to only ______.


p-n junction diode is formed


The formation of the depletion region in a p-n junction diode is due to ______.


During the formation of a p-n junction ______.


For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×