Advertisements
Advertisements
प्रश्न
Find the currents through the resistance in the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Advertisements
उत्तर
We know that under forward bias, an ideal diode acts as a short circuit; and under reverse bias, an ideal diode acts as an open circuit.
(a) Since both the diodes are forward biassed, they can be replaced by short circuits.
Net resistance = 2 Ω
\[i = \frac{2 V}{2 \Omega} = 1 A\]
(b) One diode is forward biassed and the other is reverse biassed; thus, the resistance of one becomes ∞. The circuit becomes open at the position of the second diode, so no current flows through this arm.
\[\therefore i = \frac{2}{2 + \infty} = 0 A\]
(c) Both of them are forward biassed. Thus, the resistance is zero.
We can replace both the resistors by short circuits.
Net resistance = 2 Ω
\[\therefore i = \frac{2}{2} = 1 A\]
(d) One of them is forward biassed and the other is reverse biassed.
Thus, the current passes through the forward-biassed diode and the other acts as open circuit.
\[\therefore i = \frac{2}{2} = 1 A\]
APPEARS IN
संबंधित प्रश्न
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
The drift current in a p-n junction is
Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in

A hole diffuses from the p-side to the n-side in a p-n junction. This means that
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
