Advertisements
Advertisements
प्रश्न
Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?
Advertisements
उत्तर
According to the Wheatstone bridge principle, if the bridge is balanced, then the current flow across the central resistor is zero. So, to simplify the circuit, we can remove the central resistor.
The given circuit is also balanced, so there is no current through the diode.
Hence, the net resistance of the circuit is given by
\[R_P = \frac{R_1 R_2}{R_1 + R_2}\]
\[\text{For } R_1 = R_2 = R, \]
\[ R_P = \frac{R}{2} = \frac{40}{2}\]
\[ \Rightarrow R_P = 20 \Omega\]
APPEARS IN
संबंधित प्रश्न
Write the two processes that take place in the formation of a p-n junction.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
The drift current in a p-n junction is
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the equivalent resistance of the network shown in figure between the points A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
The depletion layer in the p-n junction diode is caused by ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?
What is a p-n junction diode?
Which process moves charge carriers from a higher concentration to a lower concentration?
What is dynamic resistance?
Which charge carriers remain near the junction after the region loses mobile charge carriers?
Why does microscopic roughness prevent a proper crystal lattice from forming between separate p-type and n-type slabs?
How does the interface between physically joined p-type and n-type slabs act on charge carriers?
How is a true p-n junction created instead of physically joining separate semiconductor pieces?
