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The drift current in a p-n junction is

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प्रश्न

The drift current in a p-n junction is

पर्याय

  •  from the n-side to the p-side 

  • from the p-side to the n-side

  •  from the p-side to the side if the junction is forward-biased and the opposite direction if it is reverse-biased

  • from the p-side to the n-side if the junction is forward-baised and in the opposite direction if it is reverse-biased.

MCQ
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उत्तर

from the n-side to the p-side

After the diffusion of majority charge carriers across a p‒n junction, an electric field is set up because of the accumulation of immobile ions at the junction. These further oppose the motion of majority charge carriers across the junction. As a result, electrons from the p region start moving to the n region and holes from the n region start moving to the p region. This constitutes the drift current. As the direction of the current is opposite to the direction of the motion of the electrons, the direction of the drift current is from the n side to the p side.

In forward biasing, there is no movement of electrons from the p region to the n region and of holes from the n region to the p region. Hence, there is not drift current.

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पाठ 45: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१७]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
MCQ | Q 8 | पृष्ठ ४१७

संबंधित प्रश्‍न

Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


The diffusion current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Find the currents through the resistance in the circuits shown in figure. 

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


p-n junction diode is formed


For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.


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