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The drift current in a p-n junction is

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प्रश्न

The drift current in a p-n junction is

पर्याय

  •  from the n-side to the p-side 

  • from the p-side to the n-side

  •  from the p-side to the side if the junction is forward-biased and the opposite direction if it is reverse-biased

  • from the p-side to the n-side if the junction is forward-baised and in the opposite direction if it is reverse-biased.

MCQ
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उत्तर

from the n-side to the p-side

After the diffusion of majority charge carriers across a p‒n junction, an electric field is set up because of the accumulation of immobile ions at the junction. These further oppose the motion of majority charge carriers across the junction. As a result, electrons from the p region start moving to the n region and holes from the n region start moving to the p region. This constitutes the drift current. As the direction of the current is opposite to the direction of the motion of the electrons, the direction of the drift current is from the n side to the p side.

In forward biasing, there is no movement of electrons from the p region to the n region and of holes from the n region to the p region. Hence, there is not drift current.

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पाठ 45: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१७]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
MCQ | Q 8 | पृष्ठ ४१७

संबंधित प्रश्‍न

A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


Diffusion current in a p-n junction is greater than the drift current in magnitude


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


In a semiconductor diode, the barrier potential offers opposition to only ______.


During the formation of a p-n junction ______.


In p-n junction diode ______.


What is a p-n junction diode?


Which process moves charge carriers from a higher concentration to a lower concentration?


Why does microscopic roughness prevent a proper crystal lattice from forming between separate p-type and n-type slabs?


How does the interface between physically joined p-type and n-type slabs act on charge carriers?


What is the net current in zero bias when diffusion and drift currents balance?


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