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The diffusion current in a p-n junction is

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प्रश्न

The diffusion current in a p-n junction is

पर्याय

  •  from the n-side ot the p-side

  • from the p-side to the n-side

  •  from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased

  •  from the p-side to the n-side if the junction is forward and in the opposite direction if it is reverse-biased.

MCQ
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उत्तर

from the p-side to the n-side

When a p‒n junction is formed then because of the difference in the concentration of charge carriers in the two regions, electrons from the n region move to the p region and holes from the p region move to the n region. Since the direction of the current is always opposite to the motion of electron, the direction of the current is from the p side to the n side. 

Similarly, when the junction is forward biassed, the positive terminal of the battery is connected to the p side of the p‒n junction and the negative terminal of the battery is connected to the n side of the p‒n junction. As a result, electrons in the n side of the p‒njunction are repelled by the negative terminal of the battery and they move to the p side, where the positive terminal of the battery attracts them. Similarly, holes from the p side of the p‒n junction are repelled by the positive terminal of the battery and they move to the n side, where the negative terminal of the battery attracts them. Thus, they give diffusion current from the p side to the n side across the p‒n junction.

In reverse biassing, there is no flow of majority carriers across the junction; hence, there is not diffusion current. Here, the flow of majority carriers is opposed by the applied voltage.

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पाठ 45: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१७]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
MCQ | Q 9 | पृष्ठ ४१७

संबंधित प्रश्‍न

Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


In a semiconductor diode, the barrier potential offers opposition to only ______.


Zener breakdown occurs in a p-n junction having p and n both:


In p-n junction diode ______.


When p-type and n-type regions are formed in a single crystal, which carriers initially diffuse from each side?


How is a true p-n junction created instead of physically joining separate semiconductor pieces?


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What is the approximate knee voltage for germanium?


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