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कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान इयत्ता ११

The diffusion current in a p-n junction is

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प्रश्न

The diffusion current in a p-n junction is

पर्याय

  •  from the n-side ot the p-side

  • from the p-side to the n-side

  •  from the n-side to the p-side if the junction is forward-biased and in the opposite direction if it is reverse-biased

  •  from the p-side to the n-side if the junction is forward and in the opposite direction if it is reverse-biased.

MCQ
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उत्तर

from the p-side to the n-side

When a p‒n junction is formed then because of the difference in the concentration of charge carriers in the two regions, electrons from the n region move to the p region and holes from the p region move to the n region. Since the direction of the current is always opposite to the motion of electron, the direction of the current is from the p side to the n side. 

Similarly, when the junction is forward biassed, the positive terminal of the battery is connected to the p side of the p‒n junction and the negative terminal of the battery is connected to the n side of the p‒n junction. As a result, electrons in the n side of the p‒njunction are repelled by the negative terminal of the battery and they move to the p side, where the positive terminal of the battery attracts them. Similarly, holes from the p side of the p‒n junction are repelled by the positive terminal of the battery and they move to the n side, where the negative terminal of the battery attracts them. Thus, they give diffusion current from the p side to the n side across the p‒n junction.

In reverse biassing, there is no flow of majority carriers across the junction; hence, there is not diffusion current. Here, the flow of majority carriers is opposed by the applied voltage.

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पाठ 45: Semiconductors and Semiconductor Devices - MCQ [पृष्ठ ४१७]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
MCQ | Q 9 | पृष्ठ ४१७

संबंधित प्रश्‍न

Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


If the two ends of a p-n junction are joined by a wire,


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


The depletion layer in the p-n junction diode is caused by ______.


Zener breakdown occurs in a p-n junction having p and n both:


For an ideal diode, in forward and reverse biased condition the resistance is respectively ______.


Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?


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