मराठी
कर्नाटक बोर्ड पी.यू.सी.पीयूसी विज्ञान इयत्ता ११

Find the Current Through the Resistance R in Figure If (A) R = 12ω (B) R = 48ω.

Advertisements
Advertisements

प्रश्न

Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)

टीपा लिहा
Advertisements

उत्तर

(a) When R = 12 Ω:

The 4 V battery is forward biassing the diode and the 6 V battery is reverse biassing the diode, so the diode is effectively reverse biassed. It acts like an open circuit so that no current flows through this branch. Hence, to simplify the circuit, this branch can be removed.

The current through R on applying the KVL in the circuit is given by

\[i = \frac{10}{24} = 0 . 4166 = 0 . 42 \]A

(b) Similarly, for R = 48 Ω,

\[i = \frac{10}{48 + 12} = \frac{10}{60} = 0 . 16 \]  A

shaalaa.com
  या प्रश्नात किंवा उत्तरात काही त्रुटी आहे का?
पाठ 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

APPEARS IN

एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
पाठ 45 Semiconductors and Semiconductor Devices
Exercises | Q 28 | पृष्ठ ४२०

संबंधित प्रश्‍न

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


The drift current in a p-n junction is


The diffusion current in a p-n junction is


Diffusion current in a p-n junction is greater than the drift current in magnitude


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


The depletion layer in the p-n junction diode is caused by ______.


In a semiconductor diode, the barrier potential offers opposition to only ______.


Zener breakdown occurs in a p-n junction having p and n both:


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×