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प्रश्न
A hole diffuses from the p-side to the n-side in a p-n junction. This means that
पर्याय
a bond is broken on the n-side and the electron freed from the bond jumps to the conduction band
a conduction electron on the p-side jumps to a broken bond to complete it
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
a bond is broken on the p-side and the electron freed from the bond jumps to a broken bond on the n-side to complete it.
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उत्तर
a bond is broken on the n-side and the electron freed from the bond jumps to a broken bond on the p-side to complete it
A hole diffuses from the p side to the n side in a p−n junction; that is, an electron moves from the n side to the p side. This implies that a bond is broken on the n side. As the electron travels towards the p side, which is rich in holes, it combines with a hole. A hole is created because of the deficiency of one electron. So, when an electron combines with a hole, it completes that bond.
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संबंधित प्रश्न
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
If the two ends of a p-n junction are joined by a wire,
The diffusion current in a p-n junction is
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Find the current through the battery in each of the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
