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Answer in detail. Discuss the effect of external voltage on the width of depletion region of a p-n junction.

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प्रश्न

Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.

थोडक्यात उत्तर
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उत्तर

  1. A p-n junction can be connected to an external voltage supply in two possible ways.
  2. A p-n junction is said to be connected in a forward bias when the p-region connected to the positive terminal and the n-region is connected to the negative terminal of an external voltage source.
  3. In forward bias connection, the external voltage effectively opposes the built-in potential of the junction. The width of the depletion region is thus reduced.
  4. The second possibility of connecting the p-n junction is in a reverse-biased electric circuit.
  5. In reverse bias connection, the p-region is connected to the negative terminal and the n-region is connected to the positive terminal of the external voltage source. This external voltage effectively adds to the built-in potential of the junction. The width of the potential barrier is thus increased.
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पाठ 14: Semiconductors - Exercises [पृष्ठ २५६]

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बालभारती Physics [English] Standard 11 Maharashtra State Board
पाठ 14 Semiconductors
Exercises | Q 3. v) | पृष्ठ २५६

संबंधित प्रश्‍न

Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.


If the two ends of a p-n junction are joined by a wire,


The drift current in a p-n junction is


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


The depletion layer in the p-n junction diode is caused by ______.


In a semiconductor diode, the barrier potential offers opposition to only ______.


Zener breakdown occurs in a p-n junction having p and n both:


The formation of the depletion region in a p-n junction diode is due to ______.


During the formation of a p-n junction ______.


In p-n junction diode ______.


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