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A Zener Diode is Fabricated by Heavily Doping Both P- and N- Sides of the Junction. Explain, Why? - Physics

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प्रश्न

A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?

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उत्तर

It is a heavily doped p-n junction. As a result, the depletion region formed is very thin and the electric field of the junction is extremely high even for a small reverse bias voltage.  

The I-V characteristics of a Zener diode are shown in the figure below:

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2016-2017 (March) Delhi Set 2

संबंधित प्रश्‍न

Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.

Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.


Diffusion current in a p-n junction is greater than the drift current in magnitude


In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively

(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


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