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प्रश्न
The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
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उत्तर
When the temperature of a reverse-biassed p‒n junction is increased, the breaking of bonds takes place because of the increase in the thermal energy of the charge carriers. Drift current is due to the flow of the minority carriers across the junction. So, when a p‒n junction is reverse biassed, the applied voltage supports the flow of minority charge carriers across the junction. Thus, the drift current increases with increase in temperature in a reverse-biassed p‒n junction.
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संबंधित प्रश्न
Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
If the two ends of a p-n junction are joined by a wire,
Diffusion current in a p-n junction is greater than the drift current in magnitude
In a p-n junction,
(a) new holes and conduction electrons are produced continuously throughout the material
(b) new holes and conduction electrons are produced continuously throughout the material except in the depletion region
(c) holes and conduction electrons recombine continuously throughout the material
(d) holes and conduction electrons recombine continuously throughout the material except in the depletion region.
In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.
Find the currents through the resistance in the circuits shown in figure.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Draw the current-voltage characteristics for the device show in figure between the terminals A and B.
(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
An AC source is connected to a diode and a resistor in series. Is the current thorough the resistor AC or DC?
A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .
Choose the correct option.
Current through a reverse-biased p-n junction increases abruptly at:
p-n junction diode is formed
The formation of the depletion region in a p-n junction diode is due to ______.
During the formation of a p-n junction ______.
