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When a P-type Impurity is Doped in a Semiconductor, a Large Number of Holes Are Created, this Does Not Make the Semiconductor Charged.

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प्रश्न

When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.

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उत्तर

A p-type semiconductor is formed by doping a group 13 element with group 14 element (Si or Ge). As the group 13 element has only 3 electrons in its valence shell and the group 14 element has 4 electrons in its valence shell, when the group 13 element, say, Al, replaces one Si in the silicon crystal, only 3 covalent bonds are formed by it. And the fourth covalent bond is left in need of one electron. So, it creates a hole. Since the atom as a whole is electriclly neutral, the p-type semiconductor is also neutral.

In a p‒n junction, when the diffusion of holes takes place across the junction because of the difference in the concentration of charge carriers from p to n sides, these holes neutralise some of the electrons on the n side. So, the atom attached with that electron becomes one electron deficient and hence positively charged. This makes the n side of the p‒n junction positively charged and the p side of the p‒n junction negatively charged.

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अध्याय 45: Semiconductors and Semiconductor Devices - Short Answers [पृष्ठ ४१७]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Short Answers | Q 8 | पृष्ठ ४१७

संबंधित प्रश्न

Write the two processes that take place in the formation of a p-n junction.


Explain briefly with the help of necessary diagrams, the  reverse biasing of a p-n junction diode. Also draw characteristic curves.


Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


If the two ends of a p-n junction are joined by a wire,


Diffusion current in a p-n junction is greater than the drift current in magnitude


The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt?  


The current−voltage characteristic of an ideal p-n junction diode is given by \[i =  i_0 ( e^{eV/KT}  - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT}  = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.

(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


What are the readings of the ammeters A1 and A2 shown in figure. Neglect the resistance of the meters.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


A diode, a resistor and a 50 Hz AC source are connected in series. The number of current pulses per second through the resistor is __________ .


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______

 


The depletion layer in the p-n junction diode is caused by ______.


p-n junction diode is formed


In p-n junction diode ______.


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