Advertisements
Advertisements
प्रश्न
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
Advertisements
उत्तर
Given:
Drift current, id = 20 µA = 20 × 10−6 A
Both holes and electrons are moving and contributing to the current flow.
We know that current is the rate of the flow of charge.
Thus, we need to find the number of electrons crossing unit area per second.
Now,
t = 1 s
\[i_d = \frac{Q}{T}\]
\[ \because T = 1 \]s
\[ \therefore i_d = Q = \]ne
\[ \Rightarrow n = \frac{i_d}{e}\]
So, the total number of charge carriers crossing the depletion region is given by
\[n = \frac{20 \times {10}^{- 6}}{2 \times 1 . 6 \times {10}^{- 19}}\]
\[ \Rightarrow n = 6 . 25 \times {10}^{13}\]
Also, the number of electrons crossing the depletion region is given by
\[n_e = \frac{n}{2} = \frac{6 . 25 \times {10}^{13}}{2}\]
\[ \Rightarrow n_e = 3 . 1 \times {10}^{13}\]
APPEARS IN
संबंधित प्रश्न
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.
Explain, with the help of a circuit diagram, the working of a photo-diode. Write briefly how it is used to detect the optical signals.
Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?
When a p-type impurity is doped in a semiconductor, a large number of holes are created, This does not make the semiconductor charged. But when holes diffuse from the p-side to the n-side in a p-n junction, the n-side gets positively charged. Explain.
If the two ends of a p-n junction are joined by a wire,
In a p-n junction with open ends,
(a) there is no systematic motion of charge carries
(b) holes and conduction electrons systematically go from the p-side to n-side and from the n-side to p-side respectively
(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.
The current−voltage characteristic of an ideal p-n junction diode is given by \[i = i_0 ( e^{eV/KT} - 1)\] where, the drift current i0 equals 10 µA. Take the temperature T to be 300 K. (a) Find the voltage V0 for which \[e^{eV/kT} = 100 .\]One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for V > V0. (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
(Use Planck constant h = 4.14 × 10-15 eV-s, Boltzmann constant k = 8·62 × 10-5 eV/K.)
Consider a p-n junction diode having the characteristic \[i - i_0 ( e^{eV/kT} - 1) \text{ where } i_0 = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.

Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?

Find the current through the resistance R in figure if (a) R = 12Ω (b) R = 48Ω.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
Answer in detail.
Discuss the effect of external voltage on the width of depletion region of a p-n junction.
The depletion layer in the p-n junction diode is caused by ______.
p-n junction diode is formed
Zener breakdown occurs in a p-n junction having p and n both:
