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The Drift Current in A P-n Junction is 20.0 µA. Estimate the Number of Electrons Crossing a Cross Section per Second in the Depletion Region.

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प्रश्न

The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.

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उत्तर

Given: 
Drift current, id = 20 µA = 20 × 10−6 A
Both holes and electrons are moving and contributing to the current flow.
We know that current is the rate of the flow of charge.
Thus, we need to find the number of electrons crossing unit area per second.
Now,
t = 1 s 

\[i_d    = \frac{Q}{T}\] 

\[ \because T = 1  \]s

\[ \therefore  i_d  = Q = \]ne

\[ \Rightarrow n = \frac{i_d}{e}\]

So, the total number of charge carriers crossing the depletion region is given by

\[n = \frac{20 \times {10}^{- 6}}{2 \times 1 . 6 \times {10}^{- 19}}\] 

\[ \Rightarrow n = 6 . 25 \times  {10}^{13}\]

Also, the number of electrons crossing the depletion region is given by

\[n_e  = \frac{n}{2} = \frac{6 . 25 \times {10}^{13}}{2}\] 

\[ \Rightarrow  n_e  = 3 . 1 \times  {10}^{13}\]

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अध्याय 45: Semiconductors and Semiconductor Devices - Exercises [पृष्ठ ४२०]

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एचसी वर्मा Concepts of Physics Volume 1 and 2 [English]
अध्याय 45 Semiconductors and Semiconductor Devices
Exercises | Q 20 | पृष्ठ ४२०

संबंधित प्रश्न

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A student wants to use two p-n junction diodes to convert alternating current into direct current. Draw the labelled circuit diagram she would use and explain how it works.


Mention the important considerations required while fabricating a p-n junction diode to be used as a Light Emitting Diode (LED). What should be the order of band gap of an LED if it is required to emit light in the visible range?


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction with open ends,
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(c) there is no net charge transfer between the two sides
(d) there is a constant electric field near the junction.


A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
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(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction


In a p.n junction, the depletion region is 400 nm wide and an electric field of 5 × 105 V m−1 exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side?


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(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


Draw the current-voltage characteristics for the device show in figure between the terminals A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


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Answer in detail.

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In p-n junction diode ______.


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