English
Karnataka Board PUCPUC Science Class 11

Find the Current Through the Battery in Each of the Circuits Shown in Figure. - Physics

Advertisements
Advertisements

Question

Find the current through the battery in each of the circuits shown in figure.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)

Short/Brief Note
Advertisements

Solution

We know that when a diode is forward biassed, it has zero resistance ideally. So, it can be replaced by a short circuit. When a diode is reverse biassed, it has infinite resistance ideally. So, it can be replaced by an open circuit.


(a) In the given circuit diagram, both diodes are forward biassed. So, the resistance of both of them is zero. Thus, the diode resistance is zero.

\[i = \frac{5}{\frac{10 \times 10}{10 + 10}} = \frac{5}{5} = 1  A\]

(b) One diode is forward biassed and the other is reverse biassed. The reverse-biassed diode is replaced by an open circuit, so no current flows through this branch.
The current passes through the forward-biassed diode only.

\[i = \frac{V}{R_{net}}   =   \frac{5}{10} = 0 . 5  A\]

shaalaa.com
  Is there an error in this question or solution?
Chapter 23: Semiconductors and Semiconductor Devices - Exercises [Page 420]

APPEARS IN

HC Verma Concepts of Physics Vol. 2 [English] Class 11 and 12
Chapter 23 Semiconductors and Semiconductor Devices
Exercises | Q 27 | Page 420

RELATED QUESTIONS

In a p-n junction diode, the current I can be expressed as

I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`

where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then

(a) What will be the forward current at a forward voltage of 0.6 V?

(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?

(c) What is the dynamic resistance?

(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?


Explain briefly with the help of necessary diagrams, the forward biasing of a p-n junction diode. Also draw characteristic curves.


Explain, with the help of a circuit diagram, the working of n-p-n transistor as a common emitter amplifier.


The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.


The drift current in a p-n junction is


The diffusion current in a p-n junction is


Two identical p-n junction may be connected in series with a battery in three ways. The potential difference across the two p-n junctions are equal in


A hole diffuses from the p-side to the n-side in a p-n junction. This means that


In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.


When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.


Consider a p-n junction diode having the characteristic \[i -  i_0 ( e^{eV/kT}  - 1) \text{ where }  i_0  = 20\mu A\] . The diode is operated at T = 300 K . (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?


Calculate the current through the circuit and the potential difference across the diode shown in figure. The drift current for the diode is 20 µA.


Each of the resistance shown in figure has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?


Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)


When the base current in a transistor is changed from 30µA to 80µA, the collector current is changed from 1.0 mA to 3.5 mA. Find the current gain β.


A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?


Choose the correct option.

Current through a reverse-biased p-n junction increases abruptly at:


Answer in detail.

Discuss the effect of external voltage on the width of depletion region of a p-n junction.


The formation of the depletion region in a p-n junction diode is due to ______.


Share
Notifications

Englishहिंदीमराठी


      Forgot password?
Use app×