Advertisements
Advertisements
Question
Find the equivalent resistance of the network shown in figure between the points A and B.

(Assume that the resistance of each diode is zero in forward bias and is infinity in reverse bias.)
Advertisements
Solution
Let the potentials at A and B be VA and VB, respectively.
(i) When VA > VB, that is, a battery is connected between points A and B, with its positive terminal connected to point A and its negative terminal connected to point B:
As the potential on the p-side of the diode is greater than the potential on the n-side of the diode, the diode is forward biased; thus, it can be replaced by a short circuit.
As the two resistances are connected in parallel, the effective resistance becomes
Equivalent resistance \[= \frac{10}{2} = 5 \Omega\]
(ii) When VA < VB:
The diode is reverse biased, so it is replaced by an open circuit. Thus, no current flows through this branch.
∴ Equivalent resistance = 10 Ω
APPEARS IN
RELATED QUESTIONS
In an unbiased p-n junction, holes diffuse from the p-region to n-region because ______.
In a p-n junction diode, the current I can be expressed as
I = `"I"_0 exp ("eV"/(2"k"_"BT") - 1)`
where I0 is called the reverse saturation current, V is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, kBis the Boltzmann constant (8.6×10−5 eV/K) and T is the absolute temperature. If for a given diode I0 = 5 × 10−12 A and T = 300 K, then
(a) What will be the forward current at a forward voltage of 0.6 V?
(b) What will be the increase in the current if the voltage across the diode is increased to 0.7 V?
(c) What is the dynamic resistance?
(d) What will be the current if reverse bias voltage changes from 1 V to 2 V?
A zener diode is fabricated by heavily doping both p- and n- sides of the junction. Explain, why?
Explain briefly with the help of necessary diagrams, the reverse biasing of a p-n junction diode. Also draw characteristic curves.
Draw a circuit diagram to study the input and output characteristics of an n-p-n transistor in its common emitter configuration. Draw the typical input and output characteristics.
How is a zener diode fabricated so as to make it a special purpose diode? Draw I-V characteristics of zener diode and explain the significance of breakdown voltage.
Explain briefly, with the help of a circuit diagram, how a p-n junction diode works as a half wave rectifier.
A semiconducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. the device may be
(a) an intrinsic semiconductor
(b) a p-type semiconductor
(c) an n-type semiconductor
(d) a p-n junction
When a p-n junction is reverse-biased, the current becomes almost constant at 25 µA. When it is forward-biased at 200 mV, a current of 75 µA is obtained. Find the magnitude of diffusion current when the diode is
(a) unbiased,
(b) reverse-biased at 200 mV and
(c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 µA. Estimate the number of electrons crossing a cross section per second in the depletion region.
A load resistor of 2kΩ is connected in the collector branch of an amplifier circuit using a transistor in common-emitter mode. The current gain β = 50. The input resistance of the transistor is 0.50 kΩ. If the input current is changed by 50µA. (a) by what amount does the output voltage change, (b) by what amount does the input voltage change and (c) what is the power gain?
If in a p-n junction diode, a square input signal of 10 V is applied as shown Then the output signal across RL will be ______
The depletion layer in the p-n junction diode is caused by ______.
p-n junction diode is formed
Zener breakdown occurs in a p-n junction having p and n both:
The formation of the depletion region in a p-n junction diode is due to ______.
Diode and resistance are connected as shown in figure. Out of the following statements which one is TRUE?

In p-n junction diode ______.
